The influence of Sm2O3 dopant on structure, morphology and transport critical current density of MgB2 wires investigated by using the transmission electron microscope
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Table 2, Table 3 and Table 4 presents the lattice parameters results for undoped and doped MgB2 wires. The wires were made by using the powder-in-tube technique [1]. The results were published in an open access article. Fig. 1 The XRPD analysis for undoped and 2%Sm2O3 doped MgB2 wire with the density of 1.28 g/cm3 [1]. Fig. 2 The XRPD analysis for 2%Sm2O3 doped MgB2 wire with the density of 1.28 g/cm3 and 1.6 g/cm3 [1]. Fig. 13. The influence of annealing temperature (T) on the critical temperature (Tc) of undoped and 2%Sm2O3 doped MgB2 wires [1]. Fig. 14. Dependence of the irreversible magnetic field (Birr) on temperature (T) (a) heating temperature and 2%Sm2O3 doped and (b) density. Dependence of the upper magnetic field (Bc2) on temperature (T) (c) heating temperature and 2%Sm2O3 doped and (d) density [1]. Fig. 15. Dependence of the scaled resistance (R/Rmax 9T) on the magnetic field. Rmax9T - means maximum resistance in 9T. Fig. 16. Dependence of the critical current density on the magnetic field (a) 15 K, (b) 20 K, (c) 25 K and 30 K. Fig. 17. The analysis of pinning by the Dew-Hughes model at 20 K, and (a) heating temperature and 2%Sm2O3 doped and (b) density. Fig. 18. The analysis of pinning by the Dew-Hughes model at 30 K, heating temperature, 2%Sm2O3 doped and density. [1] Daniel Gajda, Michał Babij, Andrzej Zaleski, Doğan Avci, Fırat Karaboga, Hakan Yetis, Ibrahim Belenli, Dariusz Zasada, Damian Szymański, Małgorzata Małecka, Wojciech Gil, Tomasz Czujko"The influence of Sm2O3 dopant on the structure, morphology, and transport of critical current density of MgB2 wires investigated by using the transmission electron microscope."Journal of Magnesium and Alloys 12 (2024) 5061-5078https://doi.org/10.1016/j.jma.2024.12.009
表2、表3及表4展示了未掺杂与掺杂二硼化镁（MgB₂）线材的晶格参数测试结果。该类线材采用粉末套管法（powder-in-tube technique）制备[1]，相关研究结果已发表于一篇开放获取期刊论文中。 图1 针对密度为1.28 g/cm³的未掺杂与2%氧化钐（Sm₂O₃）掺杂二硼化镁线材的X射线粉末衍射（XRPD）分析[1]。 图2 针对密度分别为1.28 g/cm³与1.6 g/cm³的2%氧化钐掺杂二硼化镁线材的X射线粉末衍射分析[1]。 图13 退火温度（T）对未掺杂与2%氧化钐掺杂二硼化镁线材临界温度（Tc）的影响[1]。 图14 不可逆磁场（Birr）随温度（T）的变化关系：(a) 加热温度与2%氧化钐掺杂工况、(b) 密度工况。上临界磁场（Bc2）随温度（T）的变化关系：(c) 加热温度与2%氧化钐掺杂工况、(d) 密度工况[1]。 图15 归一化电阻（R/Rmax,9T）随磁场的变化关系，其中Rmax,9T代表9T磁场下的最大电阻值。 图16 临界电流密度随磁场的变化关系：(a) 15 K、(b) 20 K、(c) 25 K与30 K工况。 图17 基于Dew-Hughes模型的钉扎机制分析（测试温度为20 K）：(a) 加热温度与2%氧化钐掺杂工况、(b) 密度工况。 图18 基于Dew-Hughes模型的钉扎机制分析（测试温度为30 K），涵盖加热温度、2%氧化钐掺杂与密度三类工况。 [1] Daniel Gajda、Michał Babij、Andrzej Zaleski、Doğan Avci、Fırat Karaboga、Hakan Yetis、Ibrahim Belenli、Dariusz Zasada、Damian Szymański、Małgorzata Małecka、Wojciech Gil、Tomasz Czujko. "The influence of Sm₂O₃ dopant on the structure, morphology, and transport of critical current density of MgB₂ wires investigated by using the transmission electron microscope". Journal of Magnesium and Alloys, 12(2024): 5061-5078. https://doi.org/10.1016/j.jma.2024.12.009
