Assessment of dual oxide options for LDMOS transistors in FinFET technology

This is the repository containing the datasets relative to the publication: A. Ruggieri, L. Tondelli, and L. Selmi, “Assessment of dual oxide options for LDMOS transistors in FinFET technology,” INFOS 2025-Granada. In this folder you will find the .csv files containing data of the TCAD simulated structures: 2nm_Ib: bulk current vs gate voltage of all the structure TO, tO and DO; 2nm_IgVg: gate current vs gate voltage of all the structure TO, tO and DO; fT_complete: gm and cgg versus gate voltage to extract the transit frequency (fT) of all the structure TO, tO and DO; IdVg ,IbVg, IgVg, fT (DOs): drain current, bulk curent, gate current, gm and cgg versus gate voltage of the DO structure with shorter gate length; IdVg_tO: drain current versus gate voltage of the tO structure; IdVg_TO: drain current versus gate voltage of the TO structure; IdVd_TO: drain current versus drain voltage of the TO structure. TO, tO, DO, and DOs refers to thick oxide, thin oxide, double oxide and double oxide shorter gate length structure respectively.本仓库包含与下述学术成果相关的数据集：A. Ruggieri、L. Tondelli与L. Selmi发表于INFOS 2025-Granada的论文《FinFET工艺中横向扩散金属氧化物半导体（LDMOS）晶体管的双氧化层方案评估》（Assessment of dual oxide options for LDMOS transistors in FinFET technology）。 本文件夹内存储了一系列工艺计算机辅助设计（TCAD）仿真结构的相关数据，均保存为.csv格式文件，具体如下： 1. 2nm_Ib：涵盖所有TO、tO及DO结构的体电流随栅极电压变化关系数据； 2. 2nm_IgVg：涵盖所有TO、tO及DO结构的栅极电流随栅极电压变化关系数据； 3. fT_complete：涵盖所有TO、tO及DO结构的跨导（gm）与栅极间电容（cgg）随栅极电压变化数据，用于提取渡越频率（fT）； 4. IdVg、IbVg、IgVg、fT (DOs)：涵盖栅长更短的DO结构的漏极电流、体电流、栅极电流、跨导（gm）与栅极间电容（cgg）随栅极电压变化关系数据； 5. IdVg_tO：tO结构的漏极电流随栅极电压变化数据； 6. IdVg_TO：TO结构的漏极电流随栅极电压变化数据； 7. IdVd_TO：TO结构的漏极电流随漏极电压变化数据。 其中，TO、tO、DO及DOs分别对应厚氧化层、薄氧化层、双氧化层以及栅长更短的双氧化层结构。