基于准异质结构和原始LiNbO3瑞利SAW谐振腔相关数据

展示了一种由应变LiNbO3浅表面层和原始LiNbO3衬底组成的新型准异质结构。准异质结构是通过将氦离子注入到单晶x切割LiNbO3晶片的表面层来构建的，其中表面层的材料特性将被注入的离子调制。通过x射线衍射(XRD)摇摆曲线表征了离子注入层的晶体质量和应变分布。在准异质结构和原始LiNbO3上制备了Rayleigh-SAW谐振腔。准异质结构上的谐振腔表现出更高的谐振频率(1.15 ~ 1.17倍)、更大的机电耦合因子(1.1 ~ 1.4倍)、更高的质量因子(1.1倍)和更大的静态电容(1.33倍)，表明应变LiNbO3层的弹性常数、压电常数和介电常数得到了有效的调制。虽然改进后的性能与调制材料常数之间的相关性仍在研究中，但这些改进揭示了执行的可行性。A novel quasi-heterostructure composed of a strained LiNbO3 shallow surface layer and a pristine LiNbO3 substrate is presented. This quasi-heterostructure is fabricated by implanting helium ions into the surface layer of a single-crystal x-cut LiNbO3 wafer, where the material properties of the surface layer are modulated by the implanted ions. The crystal quality and strain distribution of the ion-implanted layer were characterized via X-ray diffraction (XRD) rocking curves. Rayleigh-SAW resonators were fabricated on both the quasi-heterostructure and the pristine LiNbO3 substrate. The resonators on the quasi-heterostructure exhibited higher resonant frequencies (1.15–1.17 times), larger electromechanical coupling factors (1.1–1.4 times), higher quality factors (1.1 times), and larger static capacitances (1.33 times), indicating that the elastic constants, piezoelectric constants, and dielectric constants of the strained LiNbO3 layer were effectively modulated. Although the correlation between the improved performance and the modulated material constants is still under investigation, these improvements reveal the feasibility of its implementation.

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背景概述

该数据集展示了一种通过氦离子注入构建的新型准异质结构，由应变LiNbO3浅表面层和原始LiNbO3衬底组成，并制备了Rayleigh-SAW谐振腔。与原始LiNbO3相比，准异质结构上的谐振腔表现出更高的谐振频率、更大的机电耦合因子、更高的质量因子和更大的静态电容，表明材料常数得到有效调制。