Dataset in support of the journal article 'An ultra high-endurance memristor using back-end-of-line amorphous SiC'

Integrating resistive memory or neuromorphic memristors into mainstream silicon technology can be substantially facilitated if the memories are built in the back-end-of-line (BEOL) and stacked directly above the logic circuitries. Here we report a promising memristor employing a plasma-enhanced chemical vapour deposition (PECVD) bilayer of amorphous SiC/Si as device layer and Cu as an active electrode. Its endurance exceeds one billion cycles with an ON/OFF ratio of ca. two orders of magnitude. Resistance drift is observed in the first 200 million cycles, after which the devices settle with a coefficient of variation of ca. 10% for both the low and high resistance states. Ohmic conduction in the low resistance state is attributed to the formation of Cu conductive filaments inside the bilayer structure, where the nanoscale grain boundaries in the Si layer provide the pre-defined pathway for Cu ion migration. Rupture of the conductive filament leads to current conduction dominated by reverse bias Schottky emission. Multistate switching is achieved by precisely controlling the pulse conditions for potential neuromorphic computing applications. The PECVD deposition method employed here has been frequently used to deposit typical BEOL SiOC low-k interlayer dielectrics. This makes this a unique memristor system with great potential for integration. The data is presented as excel files zipped into one folder.

若阻变存储器或神经形态忆阻器采用后端制程（back-end-of-line, BEOL）工艺制备，并直接堆叠于逻辑电路上方，则可显著简化其与主流硅基工艺的集成流程。本研究报道了一款极具应用前景的忆阻器，其器件层采用等离子体增强化学气相沉积（plasma-enhanced chemical vapour deposition, PECVD）制备的非晶碳化硅/硅双层结构，活性电极为铜。该器件的循环耐久度超过10亿次，开关比约为两个数量级。在初始2亿次循环过程中会出现电阻漂移现象，后续器件性能趋于稳定，低阻态与高阻态的变异系数均约为10%。低阻态下的欧姆导电机制源于双层结构内部形成的铜导电细丝，硅层中的纳米级晶界为铜离子迁移提供了预定义路径；导电细丝的断裂则使得电流传导以反向偏置肖特基发射为主导。通过精准调控脉冲参数可实现多态开关，有望应用于神经形态计算场景。本研究采用的PECVD沉积工艺，已广泛用于制备典型BEOL制程中的SiOC低k层间介电材料，这使得本忆阻器体系具备独特的集成应用潜力。本数据集以压缩为单个文件夹的Excel文件形式提供。