Measurements of single-event burn-out of HV power devices for different techn...

High-voltage power semiconductor devices, such as IGBTs, diodes and MOSFETs are susceptible to destructive failure due to terrestrial cosmic radiation (CR). As a consequence,...高压功率半导体器件，例如绝缘栅双极型晶体管（Insulated Gate Bipolar Transistors，IGBTs）、二极管以及金属氧化物半导体场效应晶体管（Metal-Oxide-Semiconductor Field-Effect Transistor，MOSFETs），均易因地面宇宙辐射（Cosmic Radiation，CR）发生破坏性失效。因此，……