Data for Implementation of MeV heavy-ion implantation into a microstructures with a defined pattern structure using a nuclear microprobe

1. Sample preparation Microscope Slides (25 × 75 × 1 mm) from Knittel Glass were used as a substrates to better visualize the processes occurring at each stage due to their transparency. Slides were cut into three parts to obtain square samples with a side length of 25 mm. Poly(methyl methacrylate) (PMMA) was used as the resist material. PMMA powder was dissolved in acetone at a weight ratio 1:8. It was then spin-coated onto the substrate at 2500 rpm for 120 s, resulting in a 10 μm thick PMMA film on the glass. 2. Fabrication of PMMA mask Proton beam writing was performed using a microprobe chamber in our laboratory. A 2 MeV proton beam, focused to a spot of 1.3 × 4.0 µm2 at a beam current of 180 pA was used for direct ion beam lithography. Although the optimal dose for MeV proton beam writing in PMMA is considered to be in the range of 80–150 nC/mm2, in this work we used 160 nC/mm2 (1 × 1014 protons/cm2). This value was determined to be optimal for our setup based on our prior internal research. The same research also showed that the best results were obtained by performing the irradiation not in a single scan but in 10 consecutive loops, which was chosen to reduce the radiation-induced heating effect and the influence of beam current fluctuation. After irradiation, the development of microstructures was carried out using conventional dip development in a 3:7 water/isopropanol (IPA) solution (volume ratio). 3. Heavy ion implantation Implantation of heavy ions was carried out in the implantation chamber in our laboratory. Gold ions with an energy of 2.5 MeV were used for better visualization of the implanted area. Irradiation was performed in raster scanning mode using an electrostatic scanning system. The beam current was monitored throughout the entire irradiation, the beam current density was 25nA/cm2 and the accumulated dose was 1 × 1015 at/cm2. 4. Mask removing The final step in the creating of the material with heavy ions implanted in the desired pattern is the removal of the resist mask. This is achieved by subjecting the sample to acetone until the mask is fully dissolved. The sample has thus been prepared for utilisation in the intended application.1. 样品制备 采用来自Knittel Glass的显微镜载玻片（规格为25 × 75 × 1 mm）作为衬底，因其良好的透光性，可更清晰地观测各阶段的反应过程。将载玻片切割为三份，得到边长为25 mm的方形样品。选用聚甲基丙烯酸甲酯（Poly(methyl methacrylate), PMMA）作为抗蚀剂材料：将PMMA粉末与丙酮按1:8的质量比混合溶解，随后以2500 rpm的转速旋涂120秒至衬底表面，最终在玻璃衬底上形成厚度为10 μm的PMMA薄膜。 2. PMMA掩模的制备 本实验在实验室的微探针腔室内开展质子束写入工艺：采用能量为2 MeV的质子束，在束流180 pA的条件下将其聚焦至1.3 × 4.0 μm²的光斑，用于直接离子束光刻。尽管PMMA中MeV质子束写入的最优剂量通常处于80~150 nC/mm²区间，但本研究采用160 nC/mm²（对应1 × 10¹⁴ protons/cm²），该参数基于本团队前期内部研究，经优化适配本实验装置。前期研究同时证实，相较于单次扫描，采用10次连续循环辐照可获得最佳效果，该工艺可有效降低辐照热效应与束流波动的负面影响。辐照完成后，采用体积比为3:7的去离子水/异丙醇（IPA）溶液进行常规浸渍显影，以制备微结构。 3. 重离子注入 重离子注入实验在实验室的注入腔室内完成：选用能量为2.5 MeV的金离子开展实验，以提升注入区域的可视化效果。实验通过静电扫描系统以光栅扫描模式开展辐照，全程监测束流参数，其中束流密度为25 nA/cm²，累积剂量为1 × 10¹⁵ at/cm²。 4. 掩模去除 制备具有预设图案的重离子注入材料的最终步骤为去除抗蚀剂掩模：将样品置于丙酮中浸泡直至掩模完全溶解，至此样品即完成制备，可用于预定应用场景。