Interfaces between beta-Ga2O3 (100) and 3C-SiC (001) with oxidation of SiC

Collection of the structures optimized for the analysis of the interfaces of beta-Ga2O3 (100) on 3C-SiC (001). The files are named with the following scheme: POSCAR_A_B_C, where A labels the kind of slab, e.g. clean or oxidized surface and the material (3C-SiC vs Ga2O3), B labels the termination, and C labels the specific model/configuration, e.g. the type of reconstruction or the adsorption site, as reported by the work of Licciardi et al.[1]. [1]: http://arxiv.org/abs/2602.19820本数据集为针对3C型碳化硅(3C-SiC)(001)晶面上β-氧化镓(beta-Ga₂O₃)(100)晶面的界面分析所优化的结构集合。数据集内文件遵循如下命名规则：POSCAR_A_B_C，其中A用于标识平板模型的类型（例如清洁表面或氧化表面）以及所涉及的材料（3C型碳化硅与β-氧化镓）；B用于标识表面终止类型；C用于标识具体的模型/构型，例如重构类型或吸附位点，相关规则详见Licciardi等人的研究[1]。 [1]: http://arxiv.org/abs/2602.19820