Evidence for carbon clusters present near thermal gate oxides affecting the e...
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High power SiC MOSFET technologies are critical for energy saving in, e.g., distribution of electrical power. They suffer, however, from low near-interface mobility, the origin...
大功率碳化硅金属氧化物半导体场效应晶体管（SiC MOSFET）技术在电力分配等场景中对于节能至关重要。然而，这类器件普遍存在界面附近迁移率偏低的问题，其成因……
