Evidence for carbon clusters present near thermal gate oxides affecting the e...

High power SiC MOSFET technologies are critical for energy saving in, e.g., distribution of electrical power. They suffer, however, from low near-interface mobility, the origin...大功率碳化硅金属氧化物半导体场效应晶体管（SiC MOSFET）技术在电力分配等场景中对于节能至关重要。然而，这类器件普遍存在界面附近迁移率偏低的问题，其成因……