OX6 - Measurements of single-event burn-out of HV power devices for different...
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Measurements of single-event burn-out of HV power devices for different technology nodesHigh-voltage power semiconductor devices, such as IGBTs, diodes and MOSFETs are...
不同工艺节点下高压电力器件单事件烧毁（Single-Event Burn-Out）的测量数据集 高压电力半导体器件，例如绝缘栅双极型晶体管（Insulated Gate Bipolar Transistor，简称IGBTs）、二极管以及金属氧化物半导体场效应晶体管（Metal-Oxide-Semiconductor Field-Effect Transistor，简称MOSFETs）等，其……
