Holes in silicon are heavier than expected: Transport properties of extremely high mobility electrons and holes in silicon MOSFETs
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Data accompanying the publication "Holes in silicon are heavier than expected: transport properties of extremely highmobility electrons and holes in silicon MOSFETs".
与学术论文《硅中的空穴质量超出预期：硅基金属氧化物半导体场效应晶体管（MOSFET）中极高迁移率电子与空穴的输运特性》配套的数据集
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Zenodo创建时间：
2025-12-20
