MOCVD-grown InAs/InP quantum dot lasers with low threshold current_Dataset

“MOCVD-grown InAs/InP quantum dot lasers with low threshold current” dataThe dataset includes Excel files with the raw data for each figure in the manuscript.Figure 2(f) Room-temperature PL spectra of capped QDs.<br>Figure 4(a) Light–current (L–I) characteristic of a laser with 4 µm ridge width and 500 µm ridge length.(b) Current–voltage (I–V) curve of a 4 µm × 500 µm laser.(c) Emission spectra of a 4 µm × 300 µm laser at room temperature under different injection currents.(d) Enlarged spectrum at 28 mA injection current.<br>Figure 5(a) Light–current density (L-J) characteristics of lasers with 4 µm ridge width and varied ridge lengths from 300 µm to 2000 µm.(b) Threshold current density (Jth) plotted as a function of the inverse cavity length (1/L).<br>Figure 6 (a) Temperature-dependent L–I characteristics of a 4 µm × 500 µm laser.(b) Threshold current as a function of heat sink temperature for the same device.<br>Figure S1(b) PL spectrum of the reference sample, which consists of the same InAlGaAs/InP heterostructure as used in the QD growth structure but without QDs.<br>Figure S2(a) Representative L–I curves for QD ridge lasers with 4 μm ridge width and varying cavity lengths.(b) Extracted threshold currents as a function of cavity length.