Porosity in Nitride Semiconductors: Supplementary Material

This dataset contains supplementary material to Peter Griffin's PhD thesis: "Porosity in Nitride Semiconductors". The data consists of one high resolution image and three videos:

- Image1.png shows aligned optical and SEM images, revealing the corellation between the micro and macro structure of a thick porous layer. This data is discussed in section 3.3.4.1 of the thesis.

- Video1.avi shows sequential SEM images of the region around a V-pit in a porous GaN DBR, milled by FIB, thus showing how the pore structure changes with depth. This data is discussed in section 4.2.3 of the thesis.

- Video2.avi shows serial block-face imaging (SBI) data obtained from sequential FIB-SEM of a porous GaN DBR. This data is discussed in section 4.3.1.1 of the thesis.

- Video3.mp4 shows the data shown in Video2, reconstructed to show the pore structure of each layer of a porous GaN DBR. This data is discussed in section 4.3.1.1 of the thesis.

本数据集收录了彼得·格里芬（Peter Griffin）博士论文《氮化物半导体的孔隙率》的补充材料。数据集包含一幅高分辨率图像及三部视频：
- 图像1.png展示了光学图像和扫描电子显微镜（SEM）图像的对应关系，揭示了厚多孔层的微观结构与宏观结构之间的相关性。相关内容详见论文第3.3.4.1节。
- 视频视频1.avi展示了通过聚焦离子束（FIB）加工的孔隙型GaN DBR区域中V型凹槽周围的SEM图像序列，展示了孔隙结构随深度的变化。相关内容详见论文第4.2.3节。
- 视频视频2.avi展示了从孔隙型GaN DBR的连续FIB-SEM切片成像（SBI）获得的序列数据。相关内容详见论文第4.3.1.1节。
- 视频视频3.mp4展示了与视频2相同的数据，经重建以展示孔隙型GaN DBR每一层的孔隙结构。相关内容详见论文第4.3.1.1节。