17 GHz lossless InP-membrane active metasurface

High-speed active metasurfaces enable spatiotemporal light control within an ultra-thin device layer, offering new possibilities for optical communication, sensing, and computing. However, a tradeoff between electrical conductivity and optical loss has hindered the realization of a high-speed, low-loss device. Here, we experimentally demonstrate an active metasurface operating at 1.5-μm wavelength range that achieves a record-high 17.5 GHz modulation bandwidth while maintaining a high quality (Q) factor of 102 and ultra-low optical loss of 0.56 dB. This is enabled by the indium phosphide (InP) membrane platform, where n-InP offers high electron mobility and low free-carrier absorption simultaneously. A high-Q Friedrich-Wintgen quasi-bound-state-in-the-continuum mode within the InP-membrane high-contrast grating (InP HCG) traps light in the organic electro-optic material for efficient modulation. The InP HCG also functions as an ultralow-resistance interdigitated electrode, enabling 50-f..., , , # Data underlying the article: \"17 GHz Lossless InP-Membrane Active Metasurface\".

The data set consists of csv data required to reproduce the figures in the manuscript and supplementary information.

The data set is structured as follows.

Folder Fig1:

* Fig1d: Electric field intensity distribution of the resonating mode of InP HCG.
* fig1d_E2.csv : 2D data of electric field intensity distribution in Fig. 1D.
* fig1d_x.csv : x-axis of 2D map in Fig. 1D.
* fig1d_y.csv : y-axis of 2D map in Fig. 1D.
* Fig1e: Doping concentration dependent electron mobility of n-InP and n-Si.
* fig1e_InP_line.csv : Data for InP in Fig. 1E.
* Column 1: Doping concentration (cm^-3^); Column 2: Mobility (cm^2^/Vs)
* fig1e_Si_line.csv : Data for Si in Fig. 1E.
* Column 1: Doping concentration (cm^-3^); Column 2: Mobility (cm^2^/Vs)
* Fig1f: Doping concentration dependent absorption coefficient of n-InP and n-Si.
* fig1f_InP_line.csv : Data for InP (line plot, fit result) in Fig. 1f.
*...

高速有源超表面（active metasurface）可在超薄器件层内实现时空光调控，为光通信、传感与计算领域带来全新机遇。然而，电导率与光学损耗之间的固有权衡阻碍了高速低损耗器件的实现。本文通过实验展示了一款工作于1.5 μm波长区间的有源超表面，其实现了创纪录的17.5 GHz调制带宽，同时保持了102的高品质因数（Q factor）与0.56 dB的超低光学损耗。这一成果依托磷化铟（indium phosphide, InP）膜平台实现：n型磷化铟（n-InP）可同时提供高电子迁移率与低自由载流子吸收。磷化铟高对比度光栅（InP HCG）内的高Q弗里德里希-温根准连续谱束缚态（Friedrich-Wintgen quasi-bound-state-in-the-continuum）将光束缚于有机电光材料中，实现高效调制。磷化铟高对比度光栅同时作为超低电阻叉指电极，实现了50-f...。

本文配套数据集源自论文《17 GHz低损耗磷化铟膜有源超表面》的支撑数据。

该数据集包含复现论文正文与补充材料中所有图表所需的csv格式数据，结构如下：

文件夹Fig1：
* 图1d：磷化铟高对比度光栅谐振模式的电场强度分布
* fig1d_E2.csv：图1D中电场强度分布的二维数据
* fig1d_x.csv：图1D二维图谱的x轴坐标数据
* fig1d_y.csv：图1D二维图谱的y轴坐标数据
* 图1e：n型磷化铟与n型硅的掺杂浓度依赖电子迁移率
* fig1e_InP_line.csv：图1E中磷化铟的对应数据
* 第1列：掺杂浓度（cm⁻³）；第2列：迁移率（cm²/V·s）
* fig1e_Si_line.csv：图1E中硅的对应数据
* 第1列：掺杂浓度（cm⁻³）；第2列：迁移率（cm²/V·s）
* 图1f：n型磷化铟与n型硅的掺杂浓度依赖吸收系数
* fig1f_InP_line.csv：图1f中磷化铟的折线图（拟合结果）数据
* ...