Monolithically integrated ultra-high-density vertical organic electrochemical transistor arrays and complementary circuits

Organic electrochemical transistors (OECTs) can be used to create biosensors, wearable devices, and neuromorphic systems. However, restrictions in the micro- and nanopatterning of organic semiconductors, as well as topological irregularities, often limit their use in monolithically integrated circuits. Here we show that micropatterning of organic semiconductors by electron-beam exposure can be used to create high-density (up to around 7.2 million OECTs per cm2) and mechanically flexible vertical OECT arrays and circuits. The energetic electrons convert the semiconductor exposed area to an electronic insulator while retaining ionic conductivity and topological continuity with the redox-active unexposed areas essential for monolithic integration. The resulting p- and n-type vertical OECT active-matrix arrays exhibit transconductances of 0.08–1.7 S, transient times of less than 100 μs, and stable switching properties of more than 100,000 cycles. We also demonstrate vertically stacked complementary logic circuits, including NOT, NAND, and NOR gates.

有机电化学晶体管（OECTs）可应用于生物传感器、可穿戴设备和类脑系统之构建。然而，有机半导体在微纳加工过程中的限制，以及拓扑结构的非均匀性，往往限制了其在单片集成电路中的应用。本研究揭示，通过电子束曝光对有机半导体进行微结构加工，可制备出高密度（每平方厘米可达约720万个OECTs）且机械柔性的垂直OECT阵列与电路。能量电子将暴露的半导体区域转化为电子绝缘体，同时保持其与未暴露的氧化还原活性区域的离子导电性和拓扑连续性，这对于单片集成至关重要。所得的p型和n型垂直OECT有源矩阵阵列展现出0.08～1.7 S的跨导，小于100 μs的瞬态时间，以及超过10万次循环的稳定切换特性。此外，我们还展示了垂直堆叠的互补逻辑电路，包括非门、与非门和或非门。