Strain gradient in epitaxial diamond
收藏DataCite Commons2025-03-06 更新2025-04-15 收录
下载链接：
https://doi.esrf.fr/10.15151/ESRF-ES-2097400263
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资源简介：
Artificial diamonds are a promising material for new electronics and other devices. To grow them epitaxially, understanding of strain evolution during growth is required.
提供机构：
European Synchrotron Radiation Facility
创建时间：
2025-03-06
