Dataset for "Influence of MOVPE environment on the selective area thermal etching of GaN nanohole arrays"

This dataset contains scanning electron microscopy (SEM) images of various selective area thermal etching (SATE) experiments. SiN circular nano-opening are created via Displacement Talbot Lithography and Inductively coupled plasma dry etching. Then thermal etching is performed for various conditions within a metal organic vapour phase epitaxy growth reactor to create highly organized GaN nanoholes.

本数据集收录了多种选择性区域热蚀刻（SATE）实验的扫描电子显微镜（SEM）图像。通过位移 Talbot 光刻和感应耦合等离子体干刻技术，实现了 SiN 圆形纳米开孔的制造。随后，在金属有机气相外延生长反应器中，针对多种条件进行热蚀刻处理，从而形成了结构高度有序的 GaN 纳米孔。