Identifying electronic transitions of defects in hexagonal boron nitride for quantum memories

This dataset contains The Excel file reveals the properties of defects, consisting of transition dipole moment, zero phonon line, lifetime, coupling constant, quality factor, and bandwidth. The raw data includes the electronic transition of both triplet and singlet spin configurations. This dataset was used to support the findings of the following work: Cholsuk et al., Identifying electronic transitions of defects in hexagonal boron nitride for quantum memories A quantum memory is a crucial keystone for enabling large-scale quantum networks. Applicable to the practical implementation, specific properties, i.e., long storage time, selective efficient coupling with other systems, and a high memory efficiency are desirable. Though many quantum memory systems have been developed thus far, none of them can perfectly meet all requirements. This work herein proposes a quantum memory based on color centers in hexagonal boron nitride (hBN), where its performance is evaluated based on a simple theoretical model of suitable defects in a cavity. Employing density functional theory calculations, 257 triplet and 211 singlet spin electronic transitions have been investigated. Among these defects, we found that some defects inherit the Lambda electronic structures desirable for a Raman-type quantum memory and optical transitions can couple with other quantum systems. Further, the required quality factor and bandwidth are examined for each defect to achieve a 95% writing efficiency. Both parameters are influenced by the radiative transition rate in the defect state. In addition, inheriting triplet-singlet spin multiplicity indicates the possibility of being a quantum sensing, in particular, optically detected magnetic resonance. This work therefore demonstrates the potential usage of hBN defects as a quantum memory in future quantum networks. (Preprint at arXiv:2310.20645) Questions regarding this dataset should be sent to the corresponding authors.本数据集包含如下内容： 该Excel文件披露了缺陷的各项属性，具体包括跃迁偶极矩（transition dipole moment）、零声子线（zero phonon line）、寿命、耦合常数、品质因数以及带宽。 原始数据涵盖三重态与单态自旋构型的电子跃迁过程。 本数据集用于支撑以下研究成果的相关结论： Cholsuk等人发表的《用于量子存储器（quantum memory）的六方氮化硼（hexagonal boron nitride, hBN）缺陷电子跃迁识别》。 量子存储器是构建大规模量子网络的关键基石。面向实际应用场景，理想的量子存储器需具备长存储时长、可与其他系统实现选择性高效耦合以及高存储效率等特性。尽管目前已开发出多种量子存储器系统，但尚无一种能够完全满足所有上述要求。本研究提出了一种基于六方氮化硼色心的量子存储器方案，并通过腔中合适缺陷的简化理论模型对其性能进行评估。研究借助密度泛函理论（density functional theory）计算，对257种三重态自旋电子跃迁与211种单态自旋电子跃迁展开了研究。研究发现，部分缺陷具备拉曼型量子存储器所需的Λ型电子结构，且其光学跃迁可与其他量子系统实现耦合。此外，本研究针对每种缺陷分别考察了实现95%写入效率所需的品质因数与带宽。这两项参数均受缺陷态辐射跃迁速率的影响。进一步而言，具备三重态-单态自旋多重度的缺陷还具备作为量子传感器的潜力，尤其适用于光学检测磁共振（optically detected magnetic resonance）场景。因此，本研究证实了六方氮化硼缺陷在未来量子网络中作为量子存储器的应用潜力。 （预印本发布于arXiv:2310.20645） 若对本数据集存在疑问，请联系通讯作者。