Amorphous Ge quantum dot networks in SiC and Si3N4 matrices for application in photosensitive devices

It contains data including GISAXS, optical, current-voltage and spectral response of thin films consisting of Ge QDs embedded in SiC and Si3N4 matrices

该数据集包含由嵌入于碳化硅（SiC）与氮化硅（Si3N4）基质中的锗量子点（Ge QDs）构成的薄膜的掠入射小角X射线散射（GISAXS）、光学特性、电流-电压特性以及光谱响应相关数据。