Synthesis of Gallium Nitride and Related Oxides Via Ammonobasic Reactive Sublimation (ARS)

Ammonobasic reactive sublimation (ARS) is proposed as a novel method to synthesize GaN and related oxides. Results indicate that GaN growth occurs by a nitriding process of Ga and related oxides, establishing a direct dependence on NH4OH amount added as a primary chemical reactive. The samples were grown on p-type Si (111) substrates inside a tube furnace, employing GaN powder and NH4OH. The characterizations of the samples were carried out by XRD, SEM, EDS and PL techniques, revealing the influence of NH4OH on the improvement of GaN synthesis and the enhancement of its optical and structural properties.氨碱性反应升华法（Ammonobasic Reactive Sublimation，ARS）被提出作为一种合成氮化镓（GaN）及其相关氧化物的新型方法。研究结果表明，氮化镓的生长通过金属镓及其相关氧化物的氮化过程实现，且其生长与作为主要化学反应试剂添加的氢氧化铵（NH₄OH）的用量存在直接相关性。本实验以氮化镓粉末与氢氧化铵为原料，在管式炉内的p型硅（111）衬底上生长样品。采用X射线衍射（X-ray Diffraction，XRD）、扫描电子显微镜（Scanning Electron Microscope，SEM）、能量色散X射线能谱（Energy Dispersive X-ray Spectroscopy，EDS）以及光致发光（Photoluminescence，PL）技术对样品进行表征，结果揭示了氢氧化铵用量对氮化镓合成优化及其光学与结构性能提升的显著影响。