Supplementary Material for "Low Temperature Behaviour of Ti/Al/Ti/Au Contacts to AlGaN/GaN Heterostructures"

Name: Supplementary Material for "Low Temperature Behaviour of Ti/Al/Ti/Au Contacts to AlGaN/GaN Heterostructures"
Creator: Apollo - University of Cambridge Repository
Published: 2025-03-26 17:45:12
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DataCite Commons2025-03-26 更新2024-08-25 收录

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资源简介：

This supplementary material contains fits of Frenkel-Poole emission and trap-assisted tunnelling to the current-voltage characteristics of Ti/Al/Ti/Au contacts to AlGaN/GaN heterostructures, annealed at 700 °C for 30 s. The raw data for these fits will be provided in a later upload, alongside all other raw data for the paper this supports. Also given are transmission electron microscopy images of the AlGaN barrier in AlGaN/GaN heterostructures following annealing at different temperatures.

提供机构：

Apollo - University of Cambridge Repository

创建时间：

2024-03-05