Supplementary Material for "Low Temperature Behaviour of Ti/Al/Ti/Au Contacts to AlGaN/GaN Heterostructures"

This supplementary material contains fits of Frenkel-Poole emission and trap-assisted tunnelling to the current-voltage characteristics of Ti/Al/Ti/Au contacts to AlGaN/GaN heterostructures, annealed at 700 °C for 30 s. The raw data for these fits will be provided in a later upload, alongside all other raw data for the paper this supports. Also given are transmission electron microscopy images of the AlGaN barrier in AlGaN/GaN heterostructures following annealing at different temperatures.