Dataset of "Hydrogenation of Si/SiO2 Interface Using HF-Etched Wafer as a Source of Hydrogen"

This dataset summarizes the measurements for the sandwiching tunnel-oxide hydrogenation study, including temperature variation (450–850 °C), oxide thickness (1–2 nm range), effective carrier lifetime (~100 µs at 650 °C with ±5% variation; up to ~0.1 ms maximum), time stability (up to 250 min), and FTIR evidence of increased hydrogen incorporation at the Si/SiO₂ interface.本数据集汇总了夹层隧穿氧化物氢化研究的相关测量数据，涵盖温度变化范围（450~850 ℃）、氧化物厚度范围（1~2 nm）、有效载流子寿命（650 ℃下约100 µs，偏差±5%，最大值可达约0.1 ms）、时间稳定性（最长可达250 min），以及硅/二氧化硅（Si/SiO₂）界面处氢掺入量提升的傅里叶变换红外光谱（FTIR）佐证。