Data for: InAs n-i-p Diodes Fabricated using S and Si Ion Implantation

Files in this repository correspond to the results in "InAs n-i-p Diodes Fabricated using S and Si Ion Implantation" submitted to IEEE Transactions on Electron Devices.The figure files contain the graphical figures (.png) found within the manuscript and the data (.csv) required to replicate the figures.Manuscript Abstract:Planar Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) can provide significant avalanche gain with negligible excess noise. Reported InAs e-APDs are so far all top-side illuminated p-i-n diodes. Yet back-side illuminated n-i-p diodes are needed to be compatible with focal plane arrays (bump-bonding process). This work reports n-type ion implantation into i-InAs layer grown on p-InAs layers, forming n-i-p diodes for the first time. Electrical and optical characteristics of S and Si implanted mesa and planar photodiodes are investigated both experimentally and through simulation. The mesa InAs n-i-p diodes fabricated from implanted samples exhibit similar dark current densities to previously reported Be implanted mesa InAs p-i-n diodes. A peak responsivity of 1.09 A/W at 2004 nm wavelength was demonstrated using S implanted detectors after rapid thermal annealing at 600°C for 30s. The simple planar diodes exhibit higher dark current compared to Be implanted planar InAs p-i-n diodes. This is attributed to poor junction isolation resulting from n-type unintentional doping in intrinsic InAs layers. This was mitigated by adding isolation trenches around the diodes (removal of material or introducing p-doping). Therefore, we have demonstrated a promising approach for fabricating bump-bonding compatible and back-illuminated InAs n-i-p planar diodes.本仓库收录的文件，对应投稿至《IEEE电子器件汇刊（IEEE Transactions on Electron Devices）》的论文《采用硫与硅离子注入制备的InAs n-i-p二极管（InAs n-i-p Diodes Fabricated using S and Si Ion Implantation）》中的实验结果。其中图像文件包含手稿正文内的各类绘图（格式为.png），数据文件则包含复现上述绘图所需的.csv格式数据集。 论文摘要：平面型砷化铟（Indium Arsenide, InAs）电子雪崩光电二极管（electron avalanche photodiodes, e-APDs）可在近乎可忽略的过量噪声（excess noise）下实现显著的雪崩增益。目前已报道的InAs e-APDs均为顶照式p-i-n二极管。然而，为适配焦平面阵列（focal plane arrays）的凸点键合工艺（bump-bonding process），亟需采用背面照明的n-i-p二极管结构。本工作首次报道了在p型InAs衬底上生长的本征InAs层中实施n型离子注入，从而制备得到n-i-p二极管。研究人员通过实验与仿真相结合的手段，对硫（S）、硅（Si）离子注入制备的台面型（mesa）与平面型光电二极管的电学与光学特性展开了系统探究。由注入样品制备得到的台面型InAs n-i-p二极管，其暗电流密度与此前报道的铍（Be）注入台面型InAs p-i-n二极管相当。经600℃快速热退火30秒后，硫注入探测器在2004 nm波长下实现了1.09 A/W的峰值响应度。相较于铍注入平面型InAs p-i-n二极管，本研究中的简易平面型二极管表现出更高的暗电流，这归因于本征InAs层中存在非故意n型掺杂所导致的结隔离性能不佳。通过在二极管周围刻蚀隔离沟槽（移除材料或引入p型掺杂）可有效缓解这一问题。综上，本工作成功验证了一种可兼容凸点键合工艺的背面照明InAs n-i-p平面型二极管制备方案，具备良好的应用潜力。