Fabrication and characterisation of optical float-zone (100) β-Ga₂O₃ Schottky diodes – Data

This dataset supports the manuscript titled “Fabrication and characterisation of optical float-zone (100) β-Ga₂O₃ Schottky diodes ”. To assess the suitability of (100) OFZ Ga₂O₃ substrates for deep UV photodetection and power rectifiers, we rapidly fabricated vertical Schottky diodes using simple steps to produce deep UV photodetectors and Schottky Barrier Diodes (SBDs). Here, we present results solely from the SBD power diodes, and our study aims to analyse the quality of SBDs made with two different contact sizes (50 µm and 100 µm) and three distinct shapes (circular, square, and squircle) to relate material quality and device processing to device performance. The key figures of merit—Schottky barrier height (ϕB), threshold voltage (VTH), specific on-resistance (RON), reverse breakdown voltage (VBD), reverse leakage current density (JO), and maximum electric field (Emax)—are estimated, and their qualities evaluated, with plausible reasons for device failures discussed.

The dataset includes:
Linear and log plots of forward J-V Characteristics of the fabricated devicesRoom temperature and temperature dependetnt reverse J-V characteristics of a diodeJ0 and VBD as a function of temperature in the reverse bias; the behaviour of VTH and ΦB as a function of temperature in the forward bias; J0 and η as a function of temperature in the forward bias for a diode with a dimension of 50 µm.C-V plots of the fabricated devicesScanning electron microscopy images of devices before and after breakdown