Single in-situ interface characterization composed of niobium and a selectively grown (Bi1-xSbx)2Te3 topological insulator nanoribbon

With increasing interest in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a s-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in-situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricated single interface devices. In our work we utilize a novel fabrication process, combining selective area growth and shadow evaporation which allows the characterization of a single in-situ fabricated Nb/(Bi0.15Sb0.85)2Te3 nano interface. The resulting high interface transparency, is apparent by a zero bias conductance increase by a factor of 1.7. Furthermore, we present a comprehensive differential conductance analysis of our single in-situ interface for various magnetic fields, temperatures and gate voltages. Additionally, density functional theory calculations of the superconductor/topological insulator interface are performed in order to explain the peak-like shape of our differential conductance spectra and the origin of the observed smearing of conductance features.

This dataset contains the DFT and experimental raw data discussed in the associated publication.

随着马约拉纳物理（Majorana physics）在量子比特应用领域的关注度与日俱增，学界对于理解s型超导体与拓扑绝缘体（topological insulator）之间界面的性质也产生了浓厚兴趣。截至目前，界面相关分析主要集中于两类体系：一类是由两个耦合单界面构成的原位制备约瑟夫森结（Josephson junctions），另一类是非原位制备的单界面器件。本研究采用了一种结合选择性区域生长与阴影蒸发的新型制备工艺，得以实现对原位制备的单根Nb/(Bi0.15Sb0.85)2Te3纳米界面的表征。该工艺所获得的界面具有高透明度，这一点可通过零偏压电导提升1.7倍的现象得到直观印证。此外，我们针对该原位单界面，在不同磁场、温度与栅极电压条件下开展了全面的微分电导分析。此外，我们还对超导体/拓扑绝缘体界面开展了密度泛函理论（Density Functional Theory, DFT）计算，以阐释微分电导谱的类峰形状以及观测到的电导特征展宽的起源。
本数据集包含相关发表论文中所讨论的密度泛函理论计算与实验原始数据。