Summary of Reported Thermal Atomic Layer Etching Processes by Material and Reactants

This comparison, based on Table 3 of “Thermal Atomic Layer Etching: A Review” (J. Vac. Sci. Technol. A 39, 030801 (2021)) https://doi.org/10.1116/6.0000894, lists all known ALE studies organized by the material etched and the reactants employed in each step. It provides an overview of modification and removal chemistries, process types (two-step or multi-step), and corresponding literature references. The table covers a wide range of materials—including metal oxides, metals, nitrides, semiconductors, and their oxides—showing the diversity of thermal ALE mechanisms such as fluorination, ligand-exchange, conversion, and oxidation-reduction. This structured summary serves as a benchmark for identifying effective precursor combinations and understanding cross-material trends in isotropic ALE chemistry.

本对比内容基于《热原子层蚀刻：综述》（*Thermal Atomic Layer Etching: A Review*，J. Vac. Sci. Technol. A 39, 030801 (2021)）的表3，DOI链接：https://doi.org/10.1116/6.0000894，按被蚀刻材料与每一步骤所使用的反应物分类编排，梳理了所有已公开的原子层蚀刻（Atomic Layer Etching, ALE）研究案例。该内容概述了改性与刻蚀去除的化学机制、工艺类型（两步法或多步法）以及对应的文献引用。本表格涵盖了丰富的材料体系，包括金属氧化物、金属、氮化物、半导体及其氧化物，展现了热原子层蚀刻多样化的反应机制，如氟化反应、配体交换、转化反应及氧化还原反应。这份结构化的综述可作为识别高效前驱体组合、理解各向同性原子层蚀刻化学跨材料趋势的基准参考。