Dataset thin film growth of [Ni(Hvanox)2] NanoscaleAdv

We have investigated [Ni(Hvanox)2] (H2vanox = o-vanillinoxime), a square-planar Ni(II) complex, for the preparation of thin films using organic molecule evaporation. Low pressure experiments to prepare thin films were conducted at temperatures between 120–150 °C and thin films of increasing thicknesses [Ni(Hvanox)2] (16–336 nm) have been prepared on various substrates and been analyzed by microscopic and spectroscopic methods. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to reveal a rough surface morphology which exhibits a dense arrangement of elongated, rod and needle-like nanocrystals with random orientations. It also enabled us to follow the growth of the thin films by increasing thickness revealing the formation of a seeding layer. X-ray photoelectron spectroscopy (XPS and 3D ED), TEM and X-ray diffraction (XRD) were utilized to confirm the atomic structure and the elemental composition of the thin films.\n

本研究针对方形平面构型的二价镍配合物[Ni(Hvanox)₂]（其中H₂vanox代表邻香草醛肟（o-vanillinoxime）），开展了基于有机分子蒸镀法的薄膜制备研究。实验在120~150℃的低压条件下进行，最终在多种衬底上制备了厚度范围为16~336 nm的梯度厚度[Ni(Hvanox)₂]薄膜，并通过显微与光谱学手段对其进行了表征分析。扫描电子显微镜（Scanning Electron Microscopy, SEM）、原子力显微镜（Atomic Force Microscopy, AFM）与透射电子显微镜（Transmission Electron Microscopy, TEM）的表征结果显示，该薄膜表面形貌粗糙，且呈现出随机取向的细长棒状与针状纳米晶体的致密排布；通过调控薄膜厚度，上述表征手段还可用于追踪薄膜生长过程，进而揭示出晶种层的形成机制。X射线光电子能谱（X-ray Photoelectron Spectroscopy, XPS）、三维电子衍射（3D Electron Diffraction, 3D ED）、透射电子显微镜（TEM）以及X射线衍射（X-ray Diffraction, XRD）被用于确认该薄膜的原子结构与元素组成。