Strain-Induced Band Structure and Optical Conductivity Data for Kekulé-O Graphene

This repository contains Fortran 95 codes and representative numerical data supporting our study on the strain-induced electronic reconstruction and optical conductivity of Kekulé-O graphene. Using a combined numerical four-band model and analytical low-energy theory, we investigate the evolution of the electronic structure under uniaxial strain, revealing a sequence of regimes including a gapped phase, a semi-Dirac critical point, and a post-critical regime with split Dirac cones and saddle-point formation. The corresponding optical response exhibits distinct anisotropic fingerprints, including gapped absorption thresholds, semi-Dirac power-law scaling, and van Hove resonances. All data files are plain-text numerical outputs associated with band structure and optical conductivity calculations.本仓库包含支持我们针对凯库勒型氧化石墨烯（Kekulé-O graphene）的应变诱导电子重构与光导率研究的Fortran 95代码与代表性数值数据集。本研究结合数值四能带模型与解析低能理论，探究单轴应变下电子结构的演化规律，揭示了一系列物态区域：涵盖带隙相、半狄拉克临界点，以及伴随劈裂狄拉克锥与鞍点形成的临界后区域。对应的光学响应呈现出显著的各向异性特征，包括带隙吸收阈值、半狄拉克幂律标度与范霍夫共振。所有数据文件均为与能带结构及光导率计算相关的纯文本数值输出结果。