RADNEXT: TA09-289: Muon-Induced Events in Dynamic Operation

Muons are expected to be a serious concern in advanced technologies. In the literature, there are several reports of muon-induced single events in SRAMs, mainly focusing on the technology node, dependence on the bias voltage, difference between muons and antimuons (hereafter, negative and positive muons), etc. However, radiation tests are usually performed in static mode, just writing a pattern, irradiating, and reading back. This procedure is quite simple but it is not representative of actual operation of the SRAMs. Indeed, no report has been found in the literature relating muons and dynamic tests on these memories.

In this proposal we would like to characterize commercial CMOS 40-nm SRAMs under muons while typical dynamic tests, such as March-C or March-D, are run. For other kinds of radiation, the sensitivity increases and other less common phenomena can occur. It is possible that similar results appear with muons, but they should be investigated.

μ子（muons）在先进技术中被视作一项严峻的可靠性隐患。
已有多篇文献报道了μ子诱发静态随机存取存储器（SRAMs）中的单粒子事件，相关研究主要聚焦于制程节点、偏置电压依赖性、μ子与反μ子（antimuons，即负μ子与正μ子）的差异等方向。
然而，当前的辐射测试通常采用静态模式：仅完成写入测试图案、辐照、回读三个步骤。该流程虽简便易行，却无法反映静态随机存取存储器的真实工作工况。截至目前，尚未有文献报道μ子与这类存储器动态测试之间的关联研究。

在本研究提案中，我们拟对商用40纳米CMOS制程的静态随机存取存储器开展μ子辐照表征实验，同时运行典型的动态测试算法（如March-C或March-D）。
针对其他类型的辐射，存储器的辐射敏感性会显著提升，且可能出现其他较为罕见的物理现象。μ子辐照或许也会产生类似的效应，但相关现象仍有待深入探究。