MOCVD-grown InAs/InP quantum dot lasers with low threshold current_Dataset

“MOCVD-grown InAs/InP quantum dot lasers with low threshold current” data
The dataset includes Excel files with the raw data for each figure in the manuscript.
Figure 2
(f) Room-temperature PL spectra of capped QDs.

Figure 4
(a) Light–current (L–I) characteristic of a laser with 4 µm ridge width and 500 µm ridge length.
(b) Current–voltage (I–V) curve of a 4 µm × 500 µm laser.
(c) Emission spectra of a 4 µm × 300 µm laser at room temperature under different injection currents.
(d) Enlarged spectrum at 28 mA injection current.

Figure 5
(a) Light–current density (L-J) characteristics of lasers with 4 µm ridge width and varied ridge lengths from 300 µm to 2000 µm.
(b) Threshold current density (Jth) plotted as a function of the inverse cavity length (1/L).

Figure 6
(a) Temperature-dependent L–I characteristics of a 4 µm × 500 µm laser.
(b) Threshold current as a function of heat sink temperature for the same device.

Figure S1
(b) PL spectrum of the reference sample, which consists of the same InAlGaAs/InP heterostructure as used in the QD growth structure but without QDs.

Figure S2
(a) Representative L–I curves for QD ridge lasers with 4 μm ridge width and varying cavity lengths.
(b) Extracted threshold currents as a function of cavity length.