MOCVD-grown InAs/InP quantum dot lasers with low threshold current_Dataset

“MOCVD-grown InAs/InP quantum dot lasers with low threshold current” data The dataset includes Excel files with the raw data for each figure in the manuscript. Figure 2 (f) Room-temperature PL spectra of capped QDs. Figure 4 (a) Light–current (L–I) characteristic of a laser with 4 µm ridge width and 500 µm ridge length. (b) Current–voltage (I–V) curve of a 4 µm × 500 µm laser. (c) Emission spectra of a 4 µm × 300 µm laser at room temperature under different injection currents. (d) Enlarged spectrum at 28 mA injection current. Figure 5 (a) Light–current density (L-J) characteristics of lasers with 4 µm ridge width and varied ridge lengths from 300 µm to 2000 µm. (b) Threshold current density (Jth) plotted as a function of the inverse cavity length (1/L). Figure 6 (a) Temperature-dependent L–I characteristics of a 4 µm × 500 µm laser. (b) Threshold current as a function of heat sink temperature for the same device. Figure S1 (b) PL spectrum of the reference sample, which consists of the same InAlGaAs/InP heterostructure as used in the QD growth structure but without QDs. Figure S2 (a) Representative L–I curves for QD ridge lasers with 4 μm ridge width and varying cavity lengths. (b) Extracted threshold currents as a function of cavity length.低阈值电流金属有机化学气相沉积（Metal-organic Chemical Vapor Deposition，MOCVD）生长的InAs/InP量子点激光器数据集。本数据集包含论文手稿中所有配图对应的原始实验数据Excel文件。 图2(f)：包覆量子点的室温光致发光（Photoluminescence，PL）光谱。 图4 (a) 脊宽4 µm、脊长500 µm的激光器的光功率-电流（L-I）特性曲线。 (b) 4 µm × 500 µm激光器的电流-电压（I-V）特性曲线。 (c) 室温下不同注入电流条件下4 µm × 300 µm激光器的发射光谱。 (d) 注入电流为28 mA时的放大光谱。 图5 (a) 脊宽4 µm、脊长在300 µm至2000 µm范围内变化的激光器的光功率-电流密度（L-J）特性曲线。 (b) 以腔长倒数（1/L）为横坐标绘制的阈值电流密度（Jth）变化曲线。 图6 (a) 4 µm × 500 µm激光器的变温光功率-电流（L-I）特性曲线。 (b) 同一器件的阈值电流随热沉温度的变化关系。 补充图S1(b)：参考样品的光致发光光谱，该样品采用与量子点生长结构一致的InAlGaAs/InP异质结构，但未生长量子点。 补充图S2 (a) 脊宽4 μm、腔长各异的量子点脊形激光器的典型光功率-电流（L-I）曲线。 (b) 提取得到的阈值电流随腔长的变化关系。