The effect of proton irradiation on GaN HEMT
收藏科学数据银行2024-09-09 更新2026-04-23 收录
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资源简介：
Proton irradiation can cause degradation of the electrical characteristics of GaN HEMT devices. Proton irradiation experiments were conducted to obtain the influence of different energies and doses of protons on the electrical characteristics of GaN HEMT devices
提供机构：
中国科学院国家空间科学中心
创建时间：
2024-09-03
