A Novel Alkylated Indacenodithieno[3,2-b]thiophene-based Polymer for Highperformance

A novel rigid donor monomer, indacenodithieno[3,2-b]thiophene (IDTT), containing linear
alkyl chains is reported. Co-polymers of IDTT with the acceptor benzothiadiazole (BT) is
shown to be excellent p-type semiconductors in organic field effect transistors (OFET).
Devices based upon conventional top gate architectures with pentafluorobenzenethiol
modified Au electrodes exhibited a hole mobility up to 6.6 cm2V-1s-1 after thermal annealing.
We also demonstrate for the first time that treatment of the electrodes with solution deposited
copper(I) thiocyanate (CuSCN) interfacial layer has a beneficial hole injection/electron
blocking effect, further enhancing mobility to 8.7 cm2V-1s-1.

本文报道了一种带有直链烷基的新型刚性给体单体——茚并二噻吩并[3,2-b]噻吩（indacenodithieno[3,2-b]thiophene，IDTT）。将IDTT与受体单元苯并噻二唑（benzothiadiazole，BT）共聚得到的共聚物，在有机场效应晶体管（organic field effect transistors，OFET）中展现出优异的p型半导体性能。采用传统顶栅结构、并以五氟苯硫醇修饰金电极制备的器件，经热退火处理后，其空穴迁移率可达6.6 cm²V⁻¹s⁻¹。此外，本文首次证实，采用溶液沉积的硫氰酸亚铜（copper(I) thiocyanate，CuSCN）界面层修饰电极，可产生优异的空穴注入/电子阻挡效应，进一步将空穴迁移率提升至8.7 cm²V⁻¹s⁻¹。