Data underlying the publication: Electric-field control of zero-dimensional topological states in ultranarrow germanene nanoribbons

This is a data set for the article: 'Electric-field control of zero-dimensional topological states in ultranarrow germanene nanoribbons'. This data set includes the data for all the experimental figures of the main text as well as the supplementary material, that is measured by the PIN research group at the University of Twente. The article is written in collaboration with the Institute for Theoretical Physics from Utrecht University, who have uploaded the codes necessary to compute all theoretical figures on their own data server. Below is the abstract for the article:<br>Reversible, all-electric control of symmetry-protected zero-dimensional modes has been a longstandinggoal. In buckled honeycomb lattices, a perpendicular field couples to the staggered sublatticepotential providing the required handle. We combine scanning tunneling microscopy andtight-binding theory to switch zero-dimensional topological end states reversibly on and o! in ultranarrowgermanene nanoribbons by tuning the electric field in the tunnel junction. Increasing the fieldswitches o! the end modes of topological two-hexagon wide ribbons, while the same field switches onzero-dimensional states in initially trivial three- and four-hexagon wide ribbons. This atomic scaleplatform realizes a proof-of-principle for a zero-dimensional topological field e!ect device, openinga path for ultrasmall memory, controllable qubits, and neuromorphic architectures.

本数据集配套于论文《电场调控超窄锗烯（germanene）纳米带（nanoribbons）中的零维拓扑态》。本数据集包含特温特大学PIN研究小组测得的正文全部实验图表及补充材料对应数据。本论文由乌得勒支大学理论物理研究所合作完成，该研究所已将用于计算所有理论图表的必要代码上传至其自有数据服务器。以下为该论文的摘要：
长期以来，实现对称保护零维模式的全电学可逆调控始终是学界的核心研究目标。在褶皱蜂窝晶格中，垂直电场可与交错子晶格势耦合，从而提供所需的调控手段。我们结合扫描隧道显微镜（Scanning Tunneling Microscopy）与紧束缚理论（tight-binding theory），通过调控隧道结内的电场，在超窄锗烯纳米带中实现了零维拓扑末端态的可逆开关。增大电场可关闭拓扑双六边形宽纳米带的末端态，而相同强度的电场则会在原本非拓扑的三、四六边形宽纳米带中诱导出零维拓扑态。这一原子尺度平台为零维拓扑场效应器件提供了原理性验证，为超小型存储器、可控量子比特以及神经形态架构的研发开辟了全新路径。