Research data supporting "Alloy Segregation at Stacking Faults in Zincblende GaN Heterostructures"

The csv files, "Fig. 5 profile" and "Fig. 6 profile", contain all the data points used to construct Fig. 5(d) and Fig. 6(d) of the publication, respectively. In "Fig. 5 profile", the first two columns represents the distance and the intensity, respectively, along a line scan taken on a HAADF STEM image of a quantum well grown in a zincblende LED structure. Column 3,4 and 5 represents the distance, the scaled intensity of Ga signal, the scaled intensity of In signal, respectively, along a line scan taken on a EDS map of the same region with the HAADF STEM image. In "Fig. 6 profile", the first two columns represents the distance and the intensity, respectively, along a line scan taken on a HAADF STEM image of a electron blocking layer grown in a zincblende LED structure. Column 3,4 and 5 represents the distance, the scaled intensity of Ga signal, the scaled intensity of Al signal, respectively, along a line scan taken on a EDS map of the same region with the HAADF STEM image. "Table 1 data" contains all the data used to for the statistic published in Table 1. From row 3 to 12, there are 10 regions examined, respectively, in the quantum wells and the electron blocking layer. For both, the data are presented in three kinds, which are the group III molar fraction of In (or Al) at stacking fault, the group III molar fraction of In (or Al) at the matrix next to the stacking fault, and the ratio between them.

逗号分隔值（CSV）文件"图5剖面数据"与"图6剖面数据"，分别包含用于构建本学术论文中图5(d)与图6(d)的全部数据点。
在"图5剖面数据"中，前两列分别对应某闪锌矿结构发光二极管（Light Emitting Diode, LED）外延生长的量子阱的高角环形暗场扫描透射电子显微镜（HAADF STEM）图像的线扫描结果的距离与强度；第3、4、5列则分别对应与该HAADF STEM图像同区域的能量色散X射线谱（Energy Dispersive X-ray Spectroscopy, EDS）面扫图的线扫描结果的距离、镓（Ga）信号归一化强度与铟（In）信号归一化强度。
在"图6剖面数据"中，前两列分别对应某闪锌矿结构LED外延生长的电子阻挡层的HAADF STEM图像的线扫描结果的距离与强度；第3、4、5列则分别对应与该HAADF STEM图像同区域的EDS面扫图的线扫描结果的距离、镓（Ga）信号归一化强度与铝（Al）信号归一化强度。
"表1数据集"包含用于生成本论文表1中统计数据的全部原始数据。从第3行至第12行，共涵盖10个检测区域，分别来自量子阱与电子阻挡层。
针对这两类区域，数据均包含三类指标：堆垛层错处的第III族铟（或铝）摩尔分数、堆垛层错邻近基体处的第III族铟（或铝）摩尔分数，以及二者的比值。