Deliverable 1.3 Growth of hBN via CVD as a high-mobility substrate

The growth of hBN is explored via CVD on Ni, using a tubular reactor and ammonia borane as precursors. The parameter space was explored and hBN was successfully grown. This deliverable reports the recipe and growth of hBN via CVD, and a complete and extensive characterization with Optical Microscopy (OM), X-Ray Photoelectron Spectroscopy (XPS), Electron Energy Loss Spectra (EELS) and Transmission Electron Microscopy (TEM). Two different 10x10mm2 samples from different areas of a 4’ wafer sample were analysed by OM and XPS, and two other areas where transferred to TEM grids for TEM characterization (4 samples in total with complementary techniques).本研究采用管式反应器，以硼氨烷为前驱体，通过化学气相沉积（CVD，Chemical Vapor Deposition）法在镍（Ni）衬底上开展六方氮化硼（hBN，hexagonal boron nitride）的生长探究。研究团队对工艺参数区间进行了系统探索，并成功制备出六方氮化硼样品。本交付成果详细记录了通过化学气相沉积法制备六方氮化硼的工艺配方与生长过程，并采用光学显微镜（Optical Microscopy，OM）、X射线光电子能谱（X-Ray Photoelectron Spectroscopy，XPS）、电子能量损失谱（Electron Energy Loss Spectra，EELS）以及透射电子显微镜（Transmission Electron Microscopy，TEM）对样品进行了全面且深入的表征分析。从一块4英寸晶圆的不同区域选取两块10×10mm²的样品，分别通过光学显微镜与X射线光电子能谱完成表征；另外选取两个区域的样品转移至透射电镜铜网，用于透射电子显微镜表征。本次研究共计获得4个搭配互补表征技术的样品。