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Currently, the issue of perovskite film quality poses a challenge in the preparation of electroluminescent devices employing metal halide perovskites. In this paper, high quality perovskite films were prepared on sol-gel ZnO (s-ZnO) modified by poly [9-vinylcarbazole] (PVK). The formation of an N-H bond between PVK and perovskite improved film quality and reduced trap state density. The resulting PVK modified high efficiency green light-emitting diodes achieved a maximum current efficiency of 17.5 cd/A, which is 30% higher than the unmodified device. Additionally, the lifetime of the device was improved by 60%.

当前，采用金属卤化物钙钛矿制备电致发光器件的过程中，钙钛矿薄膜质量问题仍是一项核心挑战。本文中，研究者在经聚(9-乙烯基咔唑)(poly[9-vinylcarbazole], PVK)改性的溶胶-凝胶氧化锌(s-ZnO)衬底上制备了高质量钙钛矿薄膜。PVK与钙钛矿之间形成的N-H键可有效改善薄膜质量并降低陷阱态密度。经PVK改性的高效绿色发光二极管的最大电流效率可达17.5 cd/A，较未改性器件提升30%；同时，器件的使用寿命提升了60%。