Photoelectrochemically Self Improving Si/GaN Photocathode: Figure 1c Raw Data

Intermittent chronoamperometry (CA) testing was performed on Si/GaN photocathode in hourly manner. The LSV scan at 0 hour, 1 hour CA, 2 hours CA, 3 hours CA, 4 hours CA, 6 hours CA, 8 hours CA and 10 hours CA were recorded to track the changes of the photoelectrochemica (PEC) performance of the photocathode. The scan range was set to be 0V vs open circuit voltage (Eoc) to -0.7V vs RHE. Test was performed under one sun illumination in 0.5M H2SO4 (pH=0.4).本数据集通过间歇式计时电流法（Intermittent Chronoamperometry, CA）对硅/氮化镓（Si/GaN）光阴极开展每小时一次的测试。分别于计时电流测试0小时、1小时、2小时、3小时、4小时、6小时、8小时及10小时节点记录线性扫描伏安法（Linear Sweep Voltammetry, LSV）曲线，以追踪该光阴极的光电化学（Photoelectrochemical, PEC）性能演变。测试电位扫描范围设置为相对于开路电压（Open Circuit Voltage, Eoc）0 V 至相对于可逆氢电极（Reversible Hydrogen Electrode, RHE）-0.7 V。整套测试在0.5 mol/L硫酸（pH=0.4）电解液及标准太阳光辐照条件下进行。