<p>XRD results of AlN: ZnO thin films.</p>

Co-doping with AlN via RF sputtering is necessary since it is still very difficult to create high conductivity p-type zinc oxide (ZnO) thin films. At room temperature, RF sputtering was used with Ar (20%) and N2 (80%) at a range of target powers (150, 175, 200, 225, and 250 W). All of the produced films displayed the ZnO (002) peak of the wurzite structure. Using the PL approach, the recombination of free excitons was detected. The ZnO:AlN and ZnO:N Raman peaks were observed at 578.58 cm-1 and 276 cm-1, respectively.With hole concentrations of 3.06 × 10+16 cm-3 and 1.83 × 10+18 cm-3, respectively, and corresponding mobilities of 117 cm2 V-1 s-1 and 19.1 cm2 V-1 s-1, the AZO23 and AZO25 samples demonstrated p-type conductivity behavior. The N-Al-N complex, which forms as a shallow acceptor when Zn+2 ions are substituted by Al+3 ions, is the cause of the p-type behavior of the ZnO sample (AZO23).However, the production of (N)O acceptors due to the substitution of the bigger N-3 ions (radius of 0.146 nm) for the O-2 ions (radius of 0.140 nm), may be the cause of the p-type behavior of AZO25 sample. AZO23 sample has a greater mobility (117 cm2 V-1 s-1) which can be explained by the higher mean free path/crystallite size (Ɩ/D) ratio.通过射频溅射（RF sputtering）实现与氮化铝（AlN）的共掺杂是必要的，因为目前仍极难制备出高导电性的p型氧化锌（ZnO）薄膜。本实验在室温下开展，采用氩气（20%）与氮气（80%）的混合工作气氛，靶功率设置为150、175、200、225及250 W。所有制备得到的薄膜均呈现出纤锌矿（wurzite）结构的ZnO（002）特征衍射峰。通过光致发光（PL, Photoluminescence）方法，检测到了自由激子的复合过程。分别在578.58 cm⁻¹与276 cm⁻¹处观测到了ZnO:AlN与ZnO:N的拉曼（Raman）特征峰。AZO23与AZO25样品均表现出p型导电特性，其空穴浓度分别为3.06×10¹⁶ cm⁻³与1.83×10¹⁸ cm⁻³，对应载流子迁移率分别为117 cm²·V⁻¹·s⁻¹与19.1 cm²·V⁻¹·s⁻¹。ZnO样品（AZO23）的p型导电特性源于N-Al-N络合物：当Zn²+离子被Al³+离子取代时，该络合物会作为浅受主（shallow acceptor）存在。而AZO25样品的p型导电特性则可能源于更大离子半径的N³-离子（半径0.146 nm）取代O²-离子（半径0.140 nm）后形成的(N)O受主能级。AZO23样品拥有更高的载流子迁移率（117 cm²·V⁻¹·s⁻¹），这可通过其更高的平均自由程/晶粒尺寸（Ɩ/D）比值得到合理解释。