Research Data supporting ''Device physics of perovskite light-emitting diodes''

Data supporting ''Device physics of perovskite light-emitting diodes''. Figure 2: Current density vs voltage characteristics. Figure 3: IQE vs current density in the control device for various carrier lifetimes. Figure 4: Simulated distribution of carrier densities (a) and recombination rates (b) of the control device. Figure 6: Simulation of the electric field distribution in the device at 3 V (a), the total electron current and the electron drift current in the device at 3 V (b), and the total hole current and the hole drift current in the device at 3 V (c). Figure 7: Current density vs voltage characteristics of various thicknesses of the EML (a), the HTL (b), and the ETL (c). Figure 8: Current density vs voltage characteristics for various injection barriers ΔEc2 (a) and ΔEc3 (b). Distribution of charge carriers (c–e) and electric fields (f–h) for various injection barriers ΔEc2. Distribution of charge carriers (i–k) and electric fields (l–m) for various ΔEc3 (i–n).

支撑《钙钛矿发光二极管（perovskite light-emitting diodes）的器件物理》研究的数据。图2：电流密度-电压特性曲线。图3：对照器件中不同载流子寿命下的内量子效率（Internal Quantum Efficiency，IQE）与电流密度的对应关系。图4：对照器件的载流子密度分布(a)与复合速率分布(b)的仿真结果。图6：器件在3V偏压下的电场分布仿真(a)、3V偏压下器件的总电子电流与电子漂移电流(b)，以及3V偏压下器件的总空穴电流与空穴漂移电流(c)。图7：不同厚度的发光层（EML，Emissive Layer）(a)、空穴传输层（HTL，Hole Transport Layer）(b)与电子传输层（ETL，Electron Transport Layer）(c)对应的电流密度-电压特性曲线。图8：不同注入势垒ΔEc2(a)与ΔEc3(b)对应的电流密度-电压特性曲线；针对不同注入势垒ΔEc2的情况，电荷载流子分布(c–e)与电场分布(f–h)；针对不同ΔEc3的情况，电荷载流子分布(i–k)与电场分布(l–m)（原文标注范围为i–n）。