Synthesis, Characterization, and Application of Indolo[3,2-<i>b</i>]carbazole Semiconductors

The synthesis, characterization, and field-effect transistor (FET) properties of new indolo[3,2-b]carbazoles are described. In particular, an extensive characterization of their crystal structures has revealed the importance of the nature of the side chains (alkyl, phenyl, thienyl substituents) on their solid-state organization. These organic materials have exhibited p-type FET behavior with hole mobilities as high as 0.2 cm2 V-1 s-1 with an on/off current ratio higher than 106. Best results were obtained with phenyl-substituted indolo[3,2-b]carbazoles since the presence of phenyl substituents seems to allow efficient overlap between the oligomeric molecules. More importantly, FET properties were kept constant during several months in air.本文阐述了新型吲哚并[3,2-b]咔唑的合成、表征及其场效应晶体管（field-effect transistor, FET）性能。具体而言，对其晶体结构的全面表征揭示了侧链（烷基、苯基、噻吩基取代基）的性质对其固态堆积的重要影响。这类有机材料展现出p型场效应晶体管性能，空穴迁移率最高可达0.2 cm²·V⁻¹·s⁻¹，开关电流比高于10⁶。苯基取代的吲哚并[3,2-b]咔唑性能最优，这是因为苯基取代基可促使低聚物分子间产生有效的轨道重叠。更为关键的是，该类材料在空气中放置数月后，其场效应晶体管性能仍保持稳定。