An extension of the computer program for dynamical calculations of RHEED intensity oscillations. Heterostructures

Abstract
A practical computing algorithm working in real time has been developed for calculations of the reflection high-energy electron diffraction from the molecular beam epitaxy growing surface. The calculations are based on a dynamical diffraction theory in which the electrons are scattered on a potential, which is periodic in the direction perpendicular to the surface.

Title of program: RHEED_v2
Catalogue Id: ADUY_v1_1

Nature of problem
Reflection high-energy electron diffraction (RHEED) is a very useful technique for studying the growth and the surface analysis of thin epitaxial structures prepared by the molecular beam epitaxy (MBE). The RHEED technique can reveal, almost instantaneously, changes either in the coverage of the sample surface by adsorbates or in the surface structure of a thin film.

Versions of this program held in the CPC repository in Mendeley Data
ADUY_v1_0; RHEED; 10.1016/j.cpc.2004.12.001
ADUY_v1_1; RHEED_v2; 10.1016/j.cpc.2006.08.003
ADUY_v2_0; RHEEDGr; 10.1016/j.cpc.2005.09.004
ADUY_v3_0; RHEEDGR-09; 10.1016/j.cpc.2009.07.003
ADUY_v4_0; RHEED1DProcess; 10.1016/j.cpc.2009.11.009

This program has been imported from the CPC Program Library held at Queen's University Belfast (1969-2018)

摘要
一项针对实时计算分子束外延生长表面的反射高能电子衍射的计算算法已被开发成功。这些计算基于动态衍射理论，其中电子在垂直于表面的方向上受到周期性势场的散射。

程序名称：RHEED_v2
目录编号：ADUY_v1_1

问题性质
反射高能电子衍射（RHEED）是一种极为有用的技术，用于研究由分子束外延（MBE）制备的薄外延结构的生长及其表面分析。RHEED技术能够几乎瞬间揭示样品表面吸附剂覆盖度的变化，或薄膜表面结构的变化。

本程序库中保存的此程序版本（Mendeley数据）
ADUY_v1_0; RHEED; 10.1016/j.cpc.2004.12.001
ADUY_v1_1; RHEED_v2; 10.1016/j.cpc.2006.08.003
ADUY_v2_0; RHEEDGr; 10.1016/j.cpc.2005.09.004
ADUY_v3_0; RHEEDGR-09; 10.1016/j.cpc.2009.07.003
ADUY_v4_0; RHEED1DProcess; 10.1016/j.cpc.2009.11.009

此程序已从贝尔法斯特女王大学（1969-2018）所持有的CPC程序库中导入。