Materials Data on GaSiTc2 by Materials Project
收藏DataCite Commons2021-02-04 更新2025-04-09 收录
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https://www.osti.gov/servlets/purl/1754314/
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资源简介:
Tc2GaSi crystallizes in the orthorhombic Immm space group. The structure is one-dimensional and consists of two Tc2GaSi ribbons oriented in the (1, 0, 0) direction. Tc3- is bonded in a linear geometry to one Ga2+ and one Si4+ atom. The Tc–Ga bond length is 2.54 Å. The Tc–Si bond length is 2.28 Å. Ga2+ is bonded in a linear geometry to two equivalent Tc3- atoms. Si4+ is bonded in a linear geometry to two equivalent Tc3- atoms.
Tc₂GaSi结晶于正交晶系的Immm空间群。该晶体为一维结构,包含两条沿[1, 0, 0]晶向排布的Tc₂GaSi条带。Tc³⁻以直线型配位构型分别与一个Ga²+和一个Si⁴+原子成键,其中Tc-Ga键长为2.54 Å,Tc-Si键长为2.28 Å。Ga²+以直线型配位构型与两个等价的Tc³⁻原子成键。Si⁴+同样以直线型配位构型与两个等价的Tc³⁻原子成键。
提供机构:
LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
创建时间:
2020-12-30



