the simulation results of RDF and LER

This dataset is in support of my research paper 'Statistical Variability Study of RDF and LER on Nanosheet FETs at Sub 3nm Node'. In this study, we studied the influence of RDF and LER on NSFETs through NEGF method for simulation. The results are generated by simulation software, Nano-electronic Simulation Software (NESS), which was developed by the University of Glasgow’s Device Modelling Group. Our results predict the figures of merit of nanosheet devices at different channel lengths and widths with the influence of RDF and LER. Therefore, this study gives guidance for the device design and subsequent circuit design.

本数据集用于支撑我的研究论文《亚3nm节点下纳米片场效应晶体管（Nanosheet FETs）的随机掺杂波动（Random Dopant Fluctuation, RDF）与线边缘粗糙度（Line Edge Roughness, LER）统计变异性研究》。本研究通过非平衡格林函数（Non-equilibrium Green's Function, NEGF）方法开展仿真，探究了RDF与LER对纳米片场效应晶体管的影响。研究结果由格拉斯哥大学器件建模组开发的纳米电子仿真软件（Nano-electronic Simulation Software, NESS）生成，可预测不同沟道长度与宽度下，受RDF与LER影响的纳米片器件的性能优值。综上，本研究可为器件设计与后续电路设计提供指导性依据。