Data on Influence of Moiré Superlattice on Electronic Structure Above the Vacuum Level in Self-twisted Antimonene Heterostructures
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1. RAW LEEM image of a β-Sb/α-Sb heterostructure. E = 1.1 eV, FOV = 4.0 µm. 2. RAW µLEED patterns corresponding to the α-Sb and β-Sb layers, collected at electron energies of 43 eV and 23 eV, respectively. 3. Set of LEEM images collected as a function of the incident electron-beam energy. Data were collected for a multilayer β-Sb/α-Sb heterostructure, with the start voltage varied from −4 V to 40 V in 0.1 V steps and FOV = 10.0 µm. 4. A set of LEEM images was collected as a function of the incident electron-beam energy, along with corresponding µLEED images, to determine the twist angle. Data were collected for ten β-Sb/α-Sb heterostructures with different twist angles. For all scans, the start voltage was varied from −5 V to 15 V in 0.1 V steps. Related work: "Influence of Moiré Superlattice on Electronic Structure Above the Vacuum Level in Self-twisted Antimonene Heterostructures", published in 2D Materials by IOP Publishing.



