High-Performance, Stable Organic Thin-Film Field-Effect Transistors Based on Bis-5‘-alkylthiophen-2‘-yl-2,6-anthracene Semiconductors

The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This communication presents the design, synthesis, and device stability data for novel bis-5‘-alkylthiophen-2‘yl-2,6-anthracene organic semiconductors. When incorporated into thin-film field-effect transistors, mobilities as high as 0.5 cm2/Vs and on/off current ratios greater than 107 are observed. We have investigated device stability in terms of both shelf life and operating lifetime. Devices incorporating the reported semiconductors display an average field-effect mobility of 0.4 cm2/Vs for DHTAnt and an on/off current ratio of 106 even after 15 months of storage. Furthermore, there is no decrease in performance during continuous operation of the devices over several thousand cycles.

开发兼具优异电学性能与增强环境稳定性的新型有机半导体（organic semiconductors）是当前研究的热点方向。本通讯报道了一类新型双(5'-烷基噻吩-2'-基)-2,6-蒽有机半导体的设计、合成及其器件稳定性数据。当将该类半导体应用于薄膜场效应晶体管（thin-film field-effect transistors）时，可实现高达0.5 cm²/V·s的载流子迁移率（mobility）以及超过10^7的开关电流比（on/off current ratio）。我们从存储寿命（shelf life）与工作寿命（operating lifetime）两个维度对器件稳定性展开了研究：采用所报道半导体制备的器件中，DHTAnt的平均场效应迁移率可达0.4 cm²/V·s，即便经过15个月的存储，其开关电流比仍能维持在10^6。此外，该器件在数千次连续循环运行过程中，性能未出现任何衰减。