Data from: Thin Al1-xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown

When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies. We have carried out such a study on thin Al1–xGaxAs0.56Sb0.44 p–i–n diode wafers (Ga composition from 0 to 0.15), plus measurements of avalanche gain and dark current. Based on data obtained from 77 to 297 K, the alloys Al1−xGaxAs0.56Sb0.44 exhibited weak temperature dependence of avalanche gain and breakdown voltage, with temperature coefficient approximately 0.86–1.08 mV K−1, among the lowest values reported for a number of semiconductor materials. Considering no significant tunnelling current was observed at room temperature at typical operating conditions, the alloys Al1−xGaxAs0.56Sb0.44 (Ga from 0 to 0.15) are suitable for InP substrates-based APDs that require excellent temperature stability without high tunnelling current.

在应用雪崩光电二极管（Avalanche Photodiodes，APDs）时，雪崩击穿电压的温度依赖性是需要考量的核心性能参数之一。因此，针对APDs研发的新型材料需开展专门的实验研究。我们针对Ga组分范围为0至0.15的薄型Al₁₋ₓGaₓAs₀.₅₆Sb₀.₄₄ p-i-n二极管晶圆开展了此类研究，并同步完成了雪崩增益与暗电流的测量。基于77至297开尔文下获取的实验数据，Al₁₋ₓGaₓAs₀.₅₆Sb₀.₄₄合金展现出较弱的雪崩增益与击穿电压温度依赖性，其温度系数约为0.86~1.08 mV·K⁻¹，属于众多半导体材料中已报道的最低值之一。考虑到在典型工作条件下的室温环境中未观测到显著的隧穿电流，Ga组分范围为0至0.15的Al₁₋ₓGaₓAs₀.₅₆Sb₀.₄₄合金适用于对温度稳定性要求优异且无高隧穿电流需求的磷化铟衬底基APDs。