Data: Exploring Phonon Interference: Insights from a Nano-Scale Silicon Double Slit Atomistic Simulation

These resources offer a more detailed understanding of the phonon interference behaviour and help visualize the experimental setup, as well as the challenges encountered during simulation. The data presented here complement the theoretical discussion in the main manuscript and provide insights into the potential for future experiments and applications in nanotechnology, thermal management, and phonon-based devices. The frequency analysis as mentioned in the main publication and Figure S1 is being done for frequencies from 1THz to 6THz for the Geometric Case 1 with Slit Length (A=4nm), Slit Distance (d=8,6nm), Slit Width (c=3nm).The geometry analysis is where the data for the main comparison and finally validation of the claim that phononic interference in a double slit setup behaves the same as the light case that Young implemented. The different frequency cases tested using molecular dynamics. The different frequency cases tested using molecular dynamics. Frequency (THz) A (nm) d (nm) c (nm) 1 4 nm 8.6 nm 3 nm 2 4 nm 8.6 nm 3 nm 3 4 nm 8.6 nm 3 nm 4 4 nm 8.6 nm 3 nm 5 4 nm 8.6 nm 3 nm The different geometrical cases tested using molecular dynamics. Case No A (nm) d (nm) c (nm) 1 4 nm 8.6 nm 3 nm 2 8 nm 8.6 nm 3 nm 3 12 nm 8.6 nm 3 nm 4 4 nm 4 nm 3 nm 5 4 nm 20 nm 3 nm 6 4 nm 8.6 nm 1 nm 7 4 nm 8.6 nm 5 nm本系列资源可帮助研究者更深入地理解声子干涉（phonon interference）行为，直观呈现实验装置，并梳理模拟过程中遇到的各类挑战。本数据集所载数据可补充主稿件中的理论探讨内容，并为未来相关实验及纳米技术、热管理与声子器件领域的应用提供研究思路。 如主文献及补充图S1（Figure S1）所述，针对几何案例1（狭缝长度A=4nm、狭缝间距d=8.6nm、狭缝宽度c=3nm），我们开展了1THz至6THz区间的频率分析。本次几何分析所用数据将用于核心对比，并最终验证下述论断：双缝结构中的声子干涉行为与托马斯·杨所实现的光学双缝干涉完全一致。 本数据集包含通过分子动力学（molecular dynamics）模拟测试的不同频率工况。 本数据集包含通过分子动力学模拟测试的不同频率工况。 频率（THz） 狭缝长度A（nm） 狭缝间距d（nm） 狭缝宽度c（nm） 1 4nm 8.6nm 3nm 2 4nm 8.6nm 3nm 3 4nm 8.6nm 3nm 4 4nm 8.6nm 3nm 5 4nm 8.6nm 3nm 本数据集同时包含通过分子动力学模拟测试的不同几何工况。 案例编号 狭缝长度A（nm） 狭缝间距d（nm） 狭缝宽度c（nm） 1 4nm 8.6nm 3nm 2 8nm 8.6nm 3nm 3 12nm 8.6nm 3nm 4 4nm 4nm 3nm 5 4nm 20nm 3nm 6 4nm 8.6nm 1nm 7 4nm 8.6nm 5nm