Suplement Number 1

The supplementary material contains comparative study of organic memristor performance parameters, device fabrication process, film thickness distribution, Raman spectroscopy analysis, statistical distribution of ON/OFF ratio, switching speed and scan rate analysis, power consumption chart, bending test data and logic gate realization of memristors, and lastly temperature-dependent data of devices while latched in ON and OFF states.

本补充材料包含有机忆阻器（organic memristor）性能参数对比研究、器件制备工艺、薄膜厚度分布、拉曼光谱（Raman spectroscopy）分析、开关比（ON/OFF ratio）统计分布、开关速度与扫描速率分析、功耗曲线、弯折测试数据以及忆阻器的逻辑门实现；最后还包含器件处于锁存开态与关态时的温度依赖性数据。